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1

Introduction: Jean Rhys: Writing Precariously

Lopoukhine, Juliana, Regard, FrÃ©dÃ©ric, Wallart, Kerry-Jane

Journal:

Women a Cultural Review

Year:

2020

File:

PDF, 346 KB

2020

2

Photochemical oxidation of hydrogenated boron-doped diamond surfaces

Rabah Boukherroub, Xavier Wallart, Sabine Szunerits, Bernadette Marcus, Pierre Bouvier, Michel Mermoux

Journal:

Electrochemistry Communications

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

3

Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox

Baltazar, S., Liu, P., Sellier, H., Hackens, B., Martins, F., Bayot, V., Wallart, X., Desplanque, L., Huant, S., Pala, M.

Journal:

Physical Review Letters

Year:

2012

Language:

english

File:

PDF, 1.31 MB

english, 2012

4

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Pastorek, Matej, Olivier, Aurélien, Lechaux, Yoann, Wichmann, Nicolas, KARATSORI, Theano, Fahed, Maria, Bucamp, Alexandre, Addad, Ahmed, Troadec, David, Ghibaudo, Gerard, Desplanque, Ludovic, Wallart,

Journal:

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

5

[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - f max =800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

Samnouni,, Wichmann, N., Wallart, X., Coinion, C., Lepilliet, S., Bollaert, S.

Year:

2019

Language:

english

File:

PDF, 340 KB

english, 2019

6

Raman spectroscopic studies of the structure of electrolytes used in the Li/SOCl2 battery

Y. Bedfer, J. Corset, M.C. Dhamelincourt, F. Wallart, P. Barbier

Journal:

Journal of Power Sources

Year:

1983

Language:

english

File:

PDF, 304 KB

english, 1983

7

Graphene growth by molecular beam epitaxy using a solid carbon source

E. Moreau, F. J. Ferrer, D. Vignaud, S. Godey, X. Wallart

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 294 KB

english, 2010

8

A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55-m Applications

Zegaoui, M., Decoster, D., Harari, J., Magnin, V., Wallart, X., Chazelas, J.

Journal:

IEEE Photonics Technology Letters

Year:

2009

Language:

english

File:

PDF, 351 KB

english, 2009

9

22 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-m Applications

Zegaoui, M., Choueib, N., Harari, J., Decoster, D., Magnin, V., Wallart, X., Chazelas, J.

Journal:

IEEE Photonics Technology Letters

Year:

2009

Language:

english

File:

PDF, 369 KB

english, 2009

10

The Magnesium Oxide- Mono Aluminium Phosphate Reaction: Mechanism and Concentration Dependence

Borges, I., Wignacourt, J.P., Boivin, J.C., Nonat, A., Lorriaux-Rubbens, A., Wallart, F., Canini, J.M

Journal:

Advanced Materials Research

Year:

1994

Language:

english

File:

PDF, 469 KB

english, 1994

11

InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate

Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

12

[IEEE 1991 Symposium on VLSI Circuits - Oiso, Japan (May 30-June 1, 1991)] 1991 Symposium on VLSI Circuits - A Merged CBi-CMOS Gate Array With Emitter Follower Buffers

Boudon, G., Ogura, S., Tannhof, P., Wallart, F., Mollier, P., Nuez, J.P., Omet, D., Cullet, R., Plassat, D., Trauet, R., Mauchaufee, D.

Year:

1991

File:

PDF, 148 KB

1991

13

Deep-level transient spectroscopy characterization of silicon-silicon interfaces

Stievenard, D., Wallart, X., Mathiot, D.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 797 KB

english, 1991

14

Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system

Wallart, X., Nys, J. P., Zeng, H. S., Dalmai, G., Lefebvre, I., Lannoo, M.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 512 KB

english, 1990

15

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

Desplanque, L., El Kazzi, S., Codron, J.-L., Wang, Y., Ruterana, P., Moschetti, G., Grahn, J., Wallart, X.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 935 KB

english, 2012

16

phase by electron spectroscopies

Wallart, X., Nys, J. P., Tételin, C.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 330 KB

english, 1994

17

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

Thiam, Arame, Roelens, Yannick, Coinon, Christophe, Avramovic, Vanessa, Grandchamp, Brice, Ducatteau, Damien, Wallart, Xavier, Maneux, Cristell, Zaknoune, Mohammed

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1000 KB

english, 2014

18

Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

Giorgis, V., Morini, F., Zhu, T., Robillard, J.-F., Wallart, X., Codron, J.-L., Dubois, E.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 764 KB

english, 2016

19

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

Desplanque, L, Bucamp, A, Troadec, D, Patriarche, G, Wallart, X

Journal:

Year:

2018

Language:

english

File:

PDF, 2.49 MB

english, 2018

20

Modalités de capture des anomalies cytogénétiques et moléculaires pour la leucémie aiguë, le myélome multiple, le syndrome myélodysplasique, le syndrome myéloprolifératif et le syndrome myélodysplasique/myéloprolifératif : recommandations de la Société francophone de greffe de moelle et de thérapie cellulaire (SFGM-TC)

Raus, Nicole, Karam, Micheline, Chebel, Réda, Dantin, Carole, Pereira, Maguy, Wallart, Anne, Yakoub-Agha, Ibrahim, Srour, Micha

Journal:

Bulletin du Cancer

Year:

2019

File:

PDF, 722 KB

2019

21

[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - 1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

Samnouni, M., Wichmann, N., Wallart, X., Coinion, C., Lepilliet, S., Bollaert, S.

Year:

2019

File:

PDF, 778 KB

2019

22

Polarized Raman spectra of the non-linear and laser crystal Ca4GdO(BO3)3 (GdCOB)

A. Lorriaux-Rubbens, G. Aka, E. Antic-Fidancev, D. A. Keszler, F. Wallart

Journal:

Journal of Raman Spectroscopy

Year:

2000

Language:

english

File:

PDF, 96 KB

english, 2000

23

Description of a zero-dispersion fore-monochromator for low frequency Raman spectrometry

M. Leclercq, F. Wallart

Journal:

Journal of Raman Spectroscopy

Year:

1973

Language:

english

File:

PDF, 231 KB

english, 1973

24

Association Moléculaire et Paire Ionique dans le Verre et le Liquide du ‘Monohydrate de l'Acide Nitrique’

M. H. Herzog-Cance, J. Potier, A. Potier, P. Dhamelincourt, B. Sombret, F. Wallart

Journal:

Journal of Raman Spectroscopy

Year:

1978

File:

PDF, 802 KB

1978

25

Raman spectra of caesium and rubidium tetrachloroaluminates in the solid state

A. Rubbens, F. Wallart, P. Barbier, G. Mairesse, J. P. Wignacourt

Journal:

Journal of Raman Spectroscopy

Year:

1978

Language:

english

File:

PDF, 312 KB

english, 1978

26

Etude par Spectrométrie Raman Rapide de la Cinétique d'Addition de l'Acide Chlorhydrique à des Doubles Liaisons Conjuguées: Cas du cis-2, trans-4-Hexadiène

J. M. Beny, C. Bassez, B. Sombret, F. Wallart

Journal:

Journal of Raman Spectroscopy

Year:

1979

File:

PDF, 515 KB

1979

27

Etude Structurale du Tétrachloroaluminate de Sodium: Comparaison des Spectres de Diffusion Raman de la Famille des MAlCl4 (M = Li, Na, K, Rb, Cs, NO, NH4) à l'Etat Solide

F. Wallart, A. Lorriaux-Rubbens, G. Mairesse, P. Barbier, J. P. Wignacourt

Journal:

Journal of Raman Spectroscopy

Year:

1980

File:

PDF, 556 KB

1980

28

Etude par Spectroscopie et Microscopie Raman de Phases Oxyde de Molybdène Déposé sur Alumines

B. Sombret, P. Dhamelincourt, F. Wallart, A. C. Muller, M. Bouquet, J. Grosmangin

Journal:

Journal of Raman Spectroscopy

Year:

1980

File:

PDF, 550 KB

1980

29

Use of time-resolved Raman spectroscopy for measuring mixing times and concentrations

B. W. Cook, J. D. Louden, A. Lorriaux-Rubbens, L. Nouël De Kerangue, M. Bridoux, F. Wallart

Journal:

Journal of Raman Spectroscopy

Year:

1987

Language:

english

File:

PDF, 444 KB

english, 1987

30

Raman and force-field studies of potassium tetrabromoindate in the solid state

A. Lorriaux-Rubbens, F. Wallart, J. P. Wignacourt

Journal:

Journal of Raman Spectroscopy

Year:

1988

Language:

english

File:

PDF, 372 KB

english, 1988

31

Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells

J.F. Lampin, X. Wallart, J.P. Gouy, F. Mollot

Journal:

Superlattices and Microstructures

Year:

1998

Language:

english

File:

PDF, 87 KB

english, 1998

32

A study of GaInP/GaAs interfaces: metallurgical coupling of successive quantum wells

O. Schuler, O. Dehaese, X. Wallart, F. Mollot

Journal:

Superlattices and Microstructures

Year:

1998

Language:

english

File:

PDF, 78 KB

english, 1998

33

Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process

J.P. André, H. Alaoui, A. Deswarte, Y. Zheng, J.F. Pétroff, X. Wallart, J.P. Nys

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.04 MB

english, 1994

34

Raman rapid scanning experiments and applications

J.M. Beny, B. Sombret, F. Wallart, M. Leclercq

Journal:

Journal of Molecular Structure

Year:

1978

Language:

english

File:

PDF, 392 KB

english, 1978

35

Time and/or space resolved laser Raman spectroscopy

M. Delhaye, M. Bridoux, F. Wallart

Journal:

Journal of Molecular Structure

Year:

1982

Language:

english

File:

PDF, 1.30 MB

english, 1982

36

Correlation between electrical and microscopic properties of TiSi interfaces

X Wallart, J.P Nys, H.S Zeng, G Dalmai

Journal:

Year:

1990

Language:

english

File:

PDF, 271 KB

english, 1990

37

Early stages characterisation of the formation of TiSi2 on Si(100) or Si(111)

X. Wallart, J.P. Nys, G. Dalmai

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 339 KB

english, 1989

38

Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing

X. Wallart, H.S. Zeng, J.P. Nys, G. Delmai

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 292 KB

english, 1992

39

Study of the epitaxy of β-FeSi2 by codeposition of Fe and Si on Si(111)

X. Wallart, J.P. Nys, O. Dehaese, G. Vincent

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 381 KB

english, 1993

40

A temporal fusion strategy for cross-camera data association

Cina Motamed, Olivier Wallart

Journal:

Pattern Recognition Letters

Year:

2007

Language:

english

File:

PDF, 2.13 MB

english, 2007

41

Etude, en raman rapide et R.M.N. bande large, du processus transformation - devitrification - cristallisation d'un verre complexe : HN03.H20

M.H. Herzoc-Cance, J. Potier, A. Potier, J.M. Beny, B. Sombret, F. Wallart

Journal:

Advances in Molecular Relaxation and Interaction Processes

Year:

1979

File:

PDF, 946 KB

1979

42

Raman spectroscopic study of LiAlCl4/SOCl2/SO2 systems

M.C. Dhamelincourt, F. Wallart, P. Barbier, G. Mairesse, P. Descroix

Journal:

Journal of Power Sources

Year:

1985

Language:

english

File:

PDF, 285 KB

english, 1985

43

In situ micro-Raman study of discharge products of Li/SOCl2 cells

M.C. Dhamelincourt, F. Wallart, J.P. Lelieur

Journal:

Journal of Power Sources

Year:

1987

Language:

english

File:

PDF, 261 KB

english, 1987

44

Micro-raman study of electrode surface in Li/SOCl2 cells (extended abstract)

M.C. Dhamelincourt, F. Wallart, J. Corset

Journal:

Journal of Power Sources

Year:

1989

Language:

english

File:

PDF, 72 KB

english, 1989

45

Structural investigation of indium halide compounds: Single crystal Raman study of monohydrated potassium hexachloroindate

A. Lorriaux-Rubbens, F. Wallart, J.P. Wignacourt, P. Barbier, G. Mairesse

Journal:

Spectrochimica Acta Part A: Molecular Spectroscopy

Year:

1981

Language:

english

File:

PDF, 596 KB

english, 1981

46

Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

X. Wallart, H.S. Zeng, J.P. Nys, G. Dalmai

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

47

Temperature measurements of LT GaAs diodes

R. Westphalen, B. Boudart, D. Théron, X. Wallart, Y. Druelle, Y. Crosnier

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 303 KB

english, 1993

48

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 192 KB

english, 2005

49

High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (0 0 1)

X. Wallart, B. Pinsard, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 243 KB

english, 2005

50

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

D.A. Yarekha, S. Godey, X. Wallart, H. Colder, M. Zaknoune, F. Mollot

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 149 KB

english, 2007

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